Product Code:
SCDCT007
Description:
Semi Conductor Devices Characteristics Trainers
Specification:
Semi Conductor Devices Characteristics Trainers -
Junction Diode Characteristics With Two Meters: NI-0123
Objectives: To draw the V-I characteristics for PN junction diodes in forward and reverse bias conditions.
Specifications :
Variable DC regulated power supply of 0-15V @ 250mA.
On board Silicon and germanium diodes.
Dual range DC Voltmeter of /15V.
Dual range DC ammeter of 250µ A/25mA
Different values of three resistors on board.
Junction Diode Characteristics Without Meters: NI-001
Objectives:To draw the V-I characteristics for PN junction diodes in forward and reverse bias conditions.
Specifications :
variable DC regulated power supply of /15V @ 250mA
On board Silicon and Germanium diodes.
Zener Diode Characteristics With Two Meters:NI-124
Objectives:To draw the V-I characteristics of zener diodes in forward and reverse bias conditions.
Specifications :
Variable DC regulated power supply of 0-15V @ 250mA
Different values of three Zener diodes on board.
Different values of three Resistors on board.
Dual range DC voltmeter of /15V
Dual range DC ammeter of 250 µ A/25mA
Zener Diode Characteristics without meters:NI-002
Objectives: To draw the V-I characteristics of Zener diodes in forward and reverse bias conditions.
Specifications :
Variable DC regulated power supply of /15V @ 250mA.
Different Values of two Zener Diodes on board
BJT Characteristics With Meters:NI-125
Objectives: To draw the input and output characteristics of NPN and PNP transistors.
Specifications :
Two variable DC regulated power Supplies of 0-15V @ 250mA.
One npn and one pnp transistor on board
Dual range DC voltmeter of /15V
DC milli ammeter of 0-10mA.
DC micro ammeter of 0-150 µ A
BJT Characteristics Without Meters:NI-003
Objectives: To draw the input and output characteristics of NPN and PNP transistors.
Specifications :
Two variable DC regulated power supplies of 0-12V @ 250mA.
One NPN and One PNP transistor on board.
Transistor, Junction and Zener Diode Characteristics With Three Meters:NI-03A
Objectives: To observe the V-I Characteristics for PN junction diode and Zener diodes and also to observe the input and output characteristics for given NPN and PNP transistors.
Specs :
Two variable DC regulated power supplies of 0-15V @ 250mA.
Different values of resistors, Zener diodes and three types of PN junction diodes.
Dual range DC Voltmeter of /15V
Dual range DC ammeter of 2.5mA/250mA.
DC Micro ammeter of 150µA.
FET Characteristics With Two Meters:NI-0126
Objectives: To draw the drain and transfer characteristics of Field Effect Transistor.
Specifications :
Two variable DC regulated power supplies of 0-5V, 0-15V @ 250 mA.
Two different values of resistors on board.
Dual range DC voltmeter of / 15V.
DC ammeter of 0-10mA
FET Characteristics Without Meters:NI-004
Objectives:
To draw the drain and transfer characteristics of Field Effect Transistor.
With Two variable DC regulated power supplies of 0-5V, 0-15V @ 250mA.
UJT Characteristics With Two Meters:NI-0140
Objectives: To draw the V-I characteristics of a given Uni Junction Transistor.
Specifications :
Two variable DC regulated power Supplies of 0-12V @ 250mA.
Two values of resistors on board.
DC voltmeter of 0-15V
DC ammeter of 0-10mA.
UJT Characteristics Without Meters:NI-091
Objectives:
To draw the V-I characteristics of a given Uni Junction Transistor.
With Two variable DC regulated Power Supplies of 0-12V @ 250mA.
Measurement of H–Parameters of a Transistor:NI-009
Objectives: To calculate the hybrid parameters of transistor in CE configuration.
Specifications : Two variable DC regulated power supplies of 0-12V @ 250mA.
Two different circuits on boards one to measure hie, hfe and another for hoe, hre.
Photo Diode & Photo Transistor Characteristics:NI-070
Objectives:
To observe the relative effects of light intensity and voltage of a photo transistor and photo diode.
To draw the V-I Characteristics by changing the intensity of light.
Specifications :
Two variable DC regulated Power Supplies of 0-12V, 0-6V@250mA
Different values of four resistors on board.
One 10kΩ potentiometer on board.
6V/3W miniature bulb on board.
One photo diode and one photo transistor on board.
Solar Cell Characteristics:NI-0137
Objectives: To observe by focusing light on the solar cell and measure the voltage and also the current through resistance to plot a graph between voltage(Vo) versus current (Io).
Specifications :
Built in digital voltmeters and ammeters with 20V and 2000mA ranges respectively
Different values of resistors and one potentiometer to observe different outputs.
Variable light source provided on board.
Common Base Transistor Characteristics:NI-080
Objectives: To draw the input and output characteristics of PNP transistor.
Specifications :
Two variable DC regulated power supplies of 0-12V @ 250mA.
One PNP transistor on board.
Common Collector Transistor Characteristics:NI-081
Objectives: To draw the input and output characteristics of a NPN transistor.
Specifications :
Two variable DC regulated power supplies of 0-12V @ 250mA.
One NPN transistor on board.
Energy Gap of a Semiconductor:NI-092
Objectives: To determine the energy gap of a semiconductor.
Specifications:
Fixed DC regulated power supply of 0-1V/10V @ 250mA.
One micro ammeter on board.
One PN junction diode.
One ten turn potentio meter for voltage variation.
Thermistor Characteristics:NI-141
Objectives: To draw the resistance temperature and the voltage - current characteristics of a Thermistor using bridge.
Specifications :
Variable DC regulated power supply of 0-5V @ 250mA
One Galvanometer on board.
One thermistor on board.
1KW potentiometer with calibrated dial on board for balancing bridge.
Light Emitting Diode Characteristics:NI-018
Objectives:
To demonstrate the operation of a typical visible light emitting diode after drawing a forward current Vs forward voltage characteristics curve of an LED.
To select the current limiting resistance of an LED and to verify that the LED has higher reverse resistance, just like PN junction diode when LED is reverse biased.
With Variable DC regulated power supplies 0-12V @ 250mA.
LDR Characteristics Trainer:NI-0160
Objectives:
To observe that LDR resistance changes in proportion to light intensity.
This causes a corresponding change in the output voltage.
Specifications :
Two variable DC regulated power supplies of 0-6V, 0-12V@0.25A
One LDR and One miniature bulb provided on board.
SCR Characteristics Trainer:NI-006
Objectives: To draw the V-I characteristics by taking different readings of anode voltage and current to get the forward break over voltage (VF) and holding current (IH)
Specifications :
Built in variable power supplies of 0-30V, 0-12V.
S C R is provided on board.
TRIAC Characteristics Trainer:NI-068
Objectives:
To observe the forward and reverse bias V-I characteristics of Triac and plot the graph.
To observe the breakover voltages of Triac.
Specifications :
Built in variable power supplies of 0-15V, 0-30V.
TRIAC is provided on board.
DIAC Characteristics Trainer:NI-069
Objectives:
To observe the forward and reverse bias V-I characteristics of Diac and plot the graph.
To observe the break over voltages of Diac.
Specifications :
Built in variable power supplies of 0-30V.
DIAC is provided on board.
Triggering SCR Using UJT:NI-073
Objectives: To construct the SCR triggering circuit using UJT.
Specifications :
Built in fixed voltage supply AC of 24V.
Zener diode of is provided to limit supply to UJT. provided
