Electronic Devices and Circuits

Electronic Devices and Circuits

Product Code:
EDCOO1

Description:
Electronic Devices and Circuits

Specification:
Electronic Devices and Circuits -

Objectives:
To plot Volt-Ampere Characteristics of Silicon P-N Junction Diode.
To find cut-in Voltage for Silicon P-N Junction diode.
To find static and dynamic resistances in both forward and reverse biased conditions for P-N Junction diode.

Specifications :
DC Variable power supply 0-12 V/350 mA.
AC source 16 V,50 Hz .
3 No.s diodes DR25,IN4007,BY127.
Provision for add o companents.
   
»Zener Diode Characteristics:

Objectives:
To observe and draw the static characteristics of a zener diode.
To find the voltage regulation of a given zener diode.

Specifications :
DC Variable power supply 0-12 V/350 mA.
AC source 16 V,50 Hz .
3 No.s diodes 3Z9,5Z1,8Z2.
Provision for add o companents.
»Transistor Common-Base Configuration: NI-1603

Objectives:
To observe and draw the input and output characteristics of a transistor connected in common base configuration.
To find α of the given transistor.

Specifications :
Two variable power supplies 0 TO +/- 12V.
One emitter resistance and one collector resistance.
One transistor (BC107/SL100) in socket
     
»Transistor CE Characteristics:NI-1604

Objectives:
To draw the input and output characteristics of transistor connected in CE configuration.
To find β of the given transistor.

Specifications :
DC variable power supplies 0 TO +/- 12V.
One emitter resistance and one collector resistance.
One transistor (BC107/SL100) in socket.
»FET Characteristics :NI-1605

Objectives:
To draw the drain and transfer characteristics of a given FET.
To find the drain resistance (rd) amplification factor (μ) and Tran conductance (gm) of the given FET.

Specifications :
DC variable power supplies 0 TO +/- 12 V/350 mA.
One gate resistance and one drain resistance.
FET BFW 11.
     
»U J T Characteristics

Objectives: To observe the characteristics of UJT and to calculate the Intrinsic Stand-Off Ratio (η).

Specifications :
Two variable DC regulated power Supplies of 0-12V @ 250mA.
Two values of resistors on board.
DC voltmeter of 0-15V
DC ammeter of 0-10mA.
»Transistor CE Amplifier

Objectives:
To Measure the voltage gain of a CE amplifier.
To draw the frequency response curve of the CE amplifier.

Specifications :
Transistor BC-107.
DC variable regulated power Supply (0-30V, 1A).
Resistors - 33KΩ,3.3KΩ,330Ω,1.5KΩ,1KΩ,2.2KΩ,4.7KΩ.
Capacitors- 10µF,100µF.
»Common Collector Amplifier:NI-1608

Objectives:
To measure the voltage gain of a CC amplifier.
To draw the frequency response of the CC amplifier.

Specifications :
Transistor BC 107.
Regulated Power Supply (0-30V).
Resistors - 33KΩ,3.3KΩ,330Ω,1.5KΩ,1KΩ,2.2KΩ & 4.7KΩ.
»RC Coupled Amplifier:NI-1609

Objectives: To calculate voltage gain, to observe frequency response.

Specifications :
Variable DC regulated power supply.
Transistors - BC 107.
Resistors - 3.3K,33k,330Ω,1k.
Capacitors- 10µF,100µF.
     
»Common Source FET Amplifier

Objectives:
To obtain the frequency response of the common source FET Amplifier.
To find the bandwidth.

Specifications :
TN-channel FET (BFW11).
Resistors - 6.8KΩ,1MΩ,1.5KΩ.
Capacitors - 0.1µF,47µF.
Regulated power Supply 0-30V.
» Wein Bridge Oscillator:NI-1611

Objectives:
To observe that the wein bridge can be used as a good frequency selective network.
With Built in speaker and detector outputs.

Specifications:
Variable DC regulated power supply.
Transistors - BC 107.
Resistors - 10KΩ ,1kΩ,2.2kΩ,33kΩ,6.8kΩ.
Capacitors- 10µF,100µF,0.01µF.
»RC Phase Shift Oscillator:NI-1612

Objectives: To calculate the frequency of the RC phase shift oscillator & to measure the phase angles at different RC sections.

Specifications :
Variable DC regulated power supply.
Transistor BC107.
Resistors - 10KΩ,8KΩ or 10KΩ,22KΩ,1.2KΩ,100KΩ.
Capacitors - 0.001µf,0µF,1µf.
     
»Current-Series Feeedback Amplifier:NI-1613

Objectives: To measure the voltage gain of current - series feed back amplifier.

Specifications:
Variable regulated Power Supply (0-30V,1A).
Transistor BC 107.
Resistors - 33kΩ,3.3kΩ,330Ω,1.5kΩ,2.2k Ω,4.7k Ω, 1 k Ω.
Capacitors - 10µF,100µF.
»Voltage-Series Feeedback Amplifier:NI-1614

Objectives: To measure the voltage series feed back amplifier.

Specifications:
Variable regulated Power Supply (0-30V,1A).
Transistor BC 107.
Resistors - 33kΩ,3.3kΩ,330Ω,1.5kΩ,2.2k Ω,4.7k Ω, 1 k Ω.
Capacitors - 10µF,100µF.
»Hartley Oscillator:NI-1615

Objectives: To study and calculate frequency of oscillations of Hartley oscillator. Compare the frequency of oscillations, theoretically and practically.

Specifications :
Transistor BC 107.
Capacitors 0.1μF, 10 μF.
Resistors 6.8Kohm, 1Kohm and 100Kohm.
Decade inductance box (DIB).
Decade resistance box (DRB).
Variable regulated power supply (0-30V).
     
»Colpitt's Oscillator:Ni-1616

Objectives: To study and calculate frequency of oscillations of colpitt’s oscillator.

Specifications :
Transistor BC 107.
Capacitors 0.1μF, 10 μF,47 μF.
Resistors 6.8Kohm, 1Kohm and 100Kohm.
Decade inductance box (DIB).
Decade resistance box (DRB).
Variable regulated power supply (0-30V).
»Silicon-Controlled Rectifier(SCR) Charecteristics:NI-1617

Objectives: To draw the V-I Charateristics of SCR.

Specifications :
Regulated Power Supply (0-30V).
Resistors 10kΩ, 1kΩ.
Ammeter (0-50) µA.
Voltmeter (0-10V).